Method of etching porous dielectric
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United States of America Patent
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Issued Date -
Aug 18, 2005
app pub date -
May 3, 2004
filing date -
May 3, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates to methods of etching a porous dielectric. The method includes etching the film in a plasma etch chamber with CF.sub.4, H.sub.2 and a noble gas, wherein the CF.sub.4 to H.sub.2 gas flow ratio is between 1.33:1 and 2.7:1 and the noble gas is greater than about 42% of the total gas flow to the plasma chamber.
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