LDMOS transistor with improved ESD protection
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United States of America Patent
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Issued Date -
Aug 18, 2005
app pub date -
Nov 1, 2004
filing date -
Feb 13, 2004
priority date (Note) -
Abandoned
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Abstract
An ESD protection device. The ESD protection device is incorporated with a gap structure in a laterally diffused metal oxide semiconductor (LDMOS) field effect transistor, isolating a doped region and a field oxide region. When a parasitical semiconductor controlled rectifier (SCR) of LDMOS is turned off, ESD current is discharged distributively through several discharge paths, avoiding ESD current focus in a signal narrow discharge path and the danger therefrom.
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