Method of manufacturing a gas flow meter
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United States of America Patent
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Jun 12, 2007
Grant Date -
Aug 25, 2005
app pub date -
Mar 24, 2005
filing date -
Mar 27, 2002
priority date (Note) -
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Abstract
A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si.sub.3N.sub.4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.
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