Method of forming wiring structure and semiconductor device
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United States of America Patent
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Apr 15, 2008
Grant Date -
Sep 8, 2005
app pub date -
Aug 27, 2004
filing date -
Mar 8, 2004
priority date (Note) -
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Abstract
A micronized wiring structure is obtained by optimizing film forming modes of barrier metal films as being adapted respectively to a via-hole and a wiring groove, wherein sputtering processes are adopted herein, which are specifically the multi-step sputtering process for formation of the barrier metal film over the via-hole, and the one-step, low-power sputtering process for formation of the barrier metal film over the wiring groove, to thereby realize improved electric characteristics such as via-hole resistance and wiring resistance, and improved wiring reliabilities such as Cu filling property and electro-migration resistance.
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