Method for analyzing impurities

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United States of America Patent

APP PUB NO 20050208674A1
SERIAL NO

11080469

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Abstract

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The impurity analyzing method is for analyzing impurities that exist on a surface of a semiconductor wafer, which includes a step of bubbling a mixed solution including hydrofluoric acid and aqueous hydrogen peroxide or a mixed solution including hydrofluoric acid and aqueous ozone to generate a vapor including hydrofluoric acid and aqueous hydrogen peroxide or a vapor including hydrofluoric acid and aqueous ozone, a step of dissolving a film formed on the surface of the semiconductor wafer by means of the vapor including hydrofluoric acid and aqueous hydrogen peroxide or the vapor including hydrofluoric acid and aqueous ozone, a step of supplying liquid drops onto the surface of the semiconductor wafer and collecting the impurities along with the liquid drops, and a step of analyzing the collected impurities.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO MITSUBISHI SILICON CORPORATION1-2-1 SHIBAURA MINATO-KU TOKYO 105-8634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawabata, Yoshihiro Tokyo, JP 7 40
Tokushima, Kaori Tokyo, JP 1 4

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