Transparent contact for light emitting diode

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United States of America Patent

APP PUB NO 20050236630A1
SERIAL NO

10831507

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Abstract

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A transparent conductive film is deposited between the electrode and semiconductor diode to spread the current evenly, reduce the series resistance and increase light transmittance at certain wavelength. ZnO film can be used as the transparent conductive film. The Ni/Au/ZnO film is found to have an increased light transmission compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO film is 90%.

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Patent Owner(s)

Patent OwnerAddress
ARIMA COMPUTER CORPORATIONNO 758 SEC 4 BADE RD TAIPEI R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Wang-Nang Tai Chung City, TW 6 116

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