Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
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United States of America Patent
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May 2, 2006
Grant Date -
Nov 3, 2005
app pub date -
Apr 30, 2004
filing date -
Apr 30, 2004
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Abstract
A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
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