Multi-photon lithography
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United States of America Patent
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Issued Date -
Nov 17, 2005
app pub date -
May 11, 2004
filing date -
May 11, 2004
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A system and method for patterned exposure of a photoactive medium is described wherein a pulsed optical beam with a high peak-power is stretched in the time domain to reduce the peak power while maintaining the average power. The stretched pulse illuminated a pattern, such as a transparent or reflective photolithography mask. The pattern is then imaged onto the photoactive medium after recompressing the beam. This arrangement prevents damage to the mask by the high peak power of the pulsed optical beam.
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