Importance

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Abstract

A nanowire of a semiconductor material and having a uniform cross-sectional area along its length is grown using a chemical vapor deposition process. In the method, a substrate is provided, a catalyst nanoparticle is deposited on the substrate, a gaseous precursor mixture comprising a constituent element of the semiconductor material is passed over the substrate, and adatoms of the constituent element are removed from a lateral surface of the nanowire during the passing of the precursor mixture. The removing comprises passing over the substrate a gaseous etchant that forms a volatile compound with the adatoms, the gaseous etchant comprising a halogenated hydrocarbon. Removing the adatoms of the constituent element before such adatoms are incorporated into the nanowire prevents such adatoms from accumulating on the lateral surface of the nanowire and allows the nanowire to grow with a uniform cross-sectional area along its length.

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First Claim