LDMOS transistor having gate shield and trench source capacitor
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United States of America Patent
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app pub date -
Jun 16, 2004
filing date -
Jun 16, 2004
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Abstract
An LDMOS transistor includes a trench source capacitor structure and a gate-drain shield which can be interconnected whereby the source capacitor can be grounded to provide an RF ground for the shield and whereby the RF shield can have a positive DC voltage bias to enhance laterally diffused drain conductance without increasing doping therein. The trench capacitor structure can include one or more adjacent trenches to increase capacitor plate area.
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