Method of forming buried channels and microfluidic devices having the same
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United States of America Patent
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Issued Date -
Jan 5, 2006
app pub date -
Jun 30, 2004
filing date -
Jun 30, 2004
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of manufacturing an integrated device that includes filling at least one channel region of a substrate with a sacrificial material to form a filled channel, forming an encapsulating layer over the filled channel, forming an aperture in the encapsulating layer, and selectively removing the sacrificial material in the channel region is described. The sacrificial material and etchant can be selected so that the sacrificial material is etched faster than the substrate and/or encapsulating layer. An integrated device having a substrate, at least one channel formed in the substrate, an encapsulating layer located over the substrate and over at least a portion of the channel, the encapsulating layer having at least one aperture located over the channel is also described.
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