Importance

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Abstract

The invention is directed toward a photoresist-free method for depositing films comprising ferroelectric materials from metal complexes. More specifically, the method involves applying an amorphous film of a metal or metal oxide complex to a substrate. The metal complexes have the general formula M.sub.aM'.sub.bL.sub.cL'.sub.d, wherein M and M' are independently selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, and Mg, and L and L' are preferentially a ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof. These films, upon, for example, light or electron beam irradiation, may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned ferroelectric film in a single step.

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First Claim