Dual damascene trench formation to avoid low-K dielectric damage
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United States of America Patent
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Jan 30, 2007
Grant Date -
Jan 5, 2006
app pub date -
Jun 30, 2004
filing date -
Jun 30, 2004
priority date (Note) -
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Abstract
A method for forming a dual damascene including providing a first dielectric insulating layer including a via opening; forming an organic dielectric layer over the first IMD layer to include filling the via opening; forming a hardmask layer over the organic dielectric layer; photolithographically patterning and dry etching the hardmask layer and organic dielectric layer to leave a dummy portion overlying the via opening; forming an oxide liner over the dummy portion; forming a second dielectric insulating layer over the oxide liner to surround the dummy portion; planarizing the second dielectric insulating layer to expose the upper portion of the dummy portion; and, removing the organic dielectric layer to form a dual damascene opening including the oxide liner lining trench line portion sidewalls.
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