Importance

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Abstract

A non-volatile memory device includes a guiding gate that extends along a first portion of the device's channel length and a control gate that extends along a second portion of the device's channel length. The first and second portions of the channel length do not overlap. The guiding gate, which overlays the substrate above the channel region, is insulated from the semiconductor substrate in which the device is formed via an oxide layer. The channel region under the guiding gate has a doping concentration greater than the doping concentration of the substrate. The remaining portion of the channel region has a doping concentration greater than the doping concentration of the substrate but less than the doping concentration of the channel region under the guiding gate. The control gate, which also overlays the substrate above the channel region, is insulated from the substrate via an oxide-nitride-oxide layer.

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First Claim