Semiconductor device and method for manufacturing the same
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United States of America Patent
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Issued Date -
Jan 26, 2006
app pub date -
Sep 13, 2005
filing date -
Jul 24, 1998
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
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