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Abstract

A high-quality insulating film is provided, of which a dielectric constant is lower than that of the conventional SiO.sub.2, and in which no leak current exceeding 10.sup.-8 A/cm.sup.2 occurs at the time of a voltage of 20 V. A material for forming a film with a chemical vapor deposition process contains one or more chemical compounds selected from the group belonging to the following [I], and one or more chemical compounds selected from the group belonging to the following [II]: HSi(OCH.sub.3).sub.3, H.sub.2Si(OCH.sub.3).sub.2, and HSi(CH.sub.3) (OCH.sub.3).sub.2 [I](CH.sub.2.dbd.CH)Si(OCH.sub.3).sub.3, (CH.sub.2.dbd.CH)Si(OC.sub.2H.sub.5).sub.3, (CH.sub.2.dbd.CH)Si(CH.sub.3)-(OCH.sub.3).sub.2, (CH.sub.2.dbd.CH)Si(CH.sub.3)(OC.sub.2H.sub.5).sub.2, (CH.sub.2=CH)Si(CH.sub.3).sub.2(OCH.sub.3), and (CH.sub.2=CH)Si(CH.sub.3)-.sub.2(OC.sub.2H.sub.5) [II]

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