Patterning thin metal films by dry reactive ion etching
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 16, 2006
app pub date -
Aug 13, 2004
filing date -
Aug 13, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
We describe a new method for etching patterns in silver, copper, or gold, or other plate metal thin films. A pattern of a hard mask is placed onto the surface of the thin film, followed by a step of reactive ion etching using a plasma formed using a gas feed of some combination of some amounts of methane (CH.sub.4) and hydrogen (H.sub.2), and some or no amount of Argon (Ar). The areas of silver, copper or gold not covered by the hard mask are etched while the hard mask protects those areas that will form the raised portions of thin film in the final structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully