Mirror process using tungsten passivation layer for preventing metal-spiking induced mirror bridging and improving mirror curvature

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United States of America Patent

APP PUB NO 20060037933A1
SERIAL NO

10923026

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Abstract

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A mirror process uses a tungsten passivation layer to prevent metal-spiking induced mirror bridging and improve mirror curvature. A mirror structure is patterned on a first sacrificial layer overlying a substrate. A tungsten passivation layer is then blanket deposited to cover the top and sidewalls of the mirror structure. A second sacrificial layer is formed overlying the tungsten passivation layer. A releasing process with an etchant including XeF.sub.2 is performed to remove the second sacrificial layer, the tungsten passivation layer and the first sacrificial layer simultaneously.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Fei-Yuh Hsinchu, TW 14 61
Cheng, Chung-Yuan Hsinchu, TW 4 16
Hung, Keven Taipei, TW 1 14
Wang, Wei-Ya Chiayi, TW 10 29
Wu, Tzu-Yang Hsinchu, TW 12 75

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