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Abstract

A white LED of a blue and yellow light emitting (structure) layer stacked structure includes a sapphire substrate, or gallium nitride substrate, or silicon carbide substrate, or silicon substrate; a buffer layer formed on the substrate; an N type gallium nitride epitaxial layer formed on the buffer layer; an N doped Al.sub.aIn.sub.bGa.sub.1-a-bN quarternary alloy formed on the N type gallium nitride epitaxial layer; a blue light emitting structure layer which contains one or more In.sub.xGa.sub.1-xN/Al.sub.aIn.sub.bGa.sub.1-a-bN quantum well(s) formed on the N type Al.sub.aIn.sub.bGa.sub.1-a-bN layer; a yellow light emitting structure layer which contains one or more In.sub.yGa.sub.1-yN/Al.sub.aIn.sub.bGa.sub.1-a-bN quantum well(s) formed on the In.sub.xGa.sub.1-xN/Al.sub.aIn.sub.bGa.sub.1-a-bN quantum well structure; or alternatively, a yellow light emitting structure layer which contains one or more In.sub.yGa.sub.1-yN/Al.sub.aIn.sub.bGa.sub.1-a-bN quantum well(s) being formed on the N type Al.sub.aIn.sub.bGa.sub.1-a-bN layer first, and then a blue light emitting structure layer which contains one or more In.sub.xGa.sub.1-xN/Al.sub.aIn.sub.bGa.sub.1-a-bN quantum well(s) being formed on the In.sub.yGa.sub.1-yN/Al.sub.aIn.sub.bGa.sub.1-a-bN quantum well(s) structure; a P type Al.sub.0.1Ga.sub.0.9N and a P type GaN cap layer formed on the top.

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