CMOS image sensor and method for fabricating the same
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United States of America Patent
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Issued Date -
Mar 9, 2006
app pub date -
Mar 3, 2005
filing date -
Sep 9, 2004
priority date (Note) -
Abandoned
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Abstract
Disclosed are a complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same. The CMOS image sensor includes: a photodetector; a microlens formed on the photodetector; an insulating passivation layer formed on the microlens to protect the microlens; and an oxide layer with a refraction index lower than that of the microlens formed between the microlens and the insulating passivation layer. The method for fabricating a CMOS image sensor includes the steps of: forming a photodetector on a substrate; forming a microlens on the photodetector; forming an oxide layer having a refraction index lower than the microlens on the microlens; and forming an insulating passivation layer for protecting the microlens on the oxide layer.
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