Importance

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Abstract

A method of repairing a photomask having a pattern layer, an internal etch stop layer underlying the pattern layer and a substantially transparent substrate. After the mask has been partially or fully processed, the mask is inspected for defects. Defects which are appropriate to be repaired are identified, and openings associated with each defect are written into jobdeck instructions. A new layer of photoresist material is then deposited on the photomask after cleansing, and openings associated with each defect to be repaired are written into the new layer of photoresist. After the openings are developed and rinsed so that the defects to be repaired are exposed, the photomask is again etched to remove the exposed defects. Since there is an etch stop layer underlying the defects in the exposed areas, only the defect is removed and no further damage is caused to the photomask. The photoresist may then be removed, and the photomask may then be inspected to insure that the defects have been sufficiently repaired. Further processing of the photomask may then continue in the usual manner.

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First Claim