Method of selective etching using etch stop layer
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United States of America Patent
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Issued Date -
Mar 30, 2006
app pub date -
Mar 25, 2005
filing date -
Sep 27, 2004
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a mirror layer. The etch stop may reduce undesirable over-etching of the sacrificial layer and the mirror layer. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer.
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