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Abstract

A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can include particles of a wavelength conversion material. The method includes forming the wavelength conversion layer within the cavity, which can include applying and hardening a first material to form a first wavelength conversion layer on the light emitting element, and applying and hardening a second material to substantially fill the remainder of the entire cavity, thereby forming a second wavelength conversion layer. The semiconductor light emitting device manufactured by the inventive method can achieve uniform light emitting characteristics without substantially any uneven color and can include high heat dissipation efficiency.

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First Claim