Film formation method

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United States of America Patent

APP PUB NO 20060084266A1
SERIAL NO

11252795

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Abstract

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A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325
KONDOH EIICHI472-51 NAKASHIMOJO SHIKISHIMA-MACHI NAKAKOMA-GUN YAMANASHI 400-0124

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Komiya, Takayuki Nirasaki-shi, JP 24 249
Kondoh, Eiichi Kai-shi, JP 23 274
Matsuzawa, Koumei Uodu-shi, JP 7 133
Narushima, Masaki Nirasaki-shi, JP 28 1237
Sato, Hiroshi Nirasaki-shi, JP 974 10580

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