Low thermal budget dielectric stack for SONOS nonvolatile memories
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United States of America Patent
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Nov 3, 2005
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Nov 4, 2004
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Abstract
A method of forming an oxide-nitride-oxide (ONO) structure for use in a non-volatile memory cell, which includes (1) forming a first oxide layer over a substrate, (2) forming a silicon nitride layer over the first oxide layer, (3) introducing oxygen into a top interface of the silicon nitride layer, and then (4) forming a second oxide layer over the silicon nitride layer.
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