Trenched MOSFETS with part of the device formed on a (110) crystal plane
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United States of America Patent
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app pub date -
Nov 23, 2004
filing date -
Nov 23, 2004
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Abandoned
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Abstract
This invention discloses an improved MOSFET devices manufactured with a trenched gate by forming part of the trench on a (110) crystal orientation of a semiconductor substrate. The trench is covering with a dielectric oxide layer along the sidewalls and the bottom surface or the termination of the trench formed along different crystal orientations of the semiconductor substrate. Special manufacturing processes such as oxide annealing process, special mask or SOG processes are implemented to overcome the limitations of the non-uniform dielectric layer growth.
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