Slurry composition and methods for chemical mechanical polishing
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 8, 2006
app pub date -
Dec 3, 2004
filing date -
Dec 3, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A chemical-mechanical planarization (CMP) slurry comprising at least one abrasive particles at least one oxidizer, and at least one carrier. The abrasive particles can be selected from: a particle with all soft material, a particle having a soft outer material and a hard inner material, an inner charged particle, a magnetized particle, and an empty core particle. The substrate to be polished can be Aluminum, Copper, Ti, TiN, Ag. W, or their alloys, Oxide, Ni--P, Si.sub.3N.sub.4 for example.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully