Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
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United States of America Patent
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May 29, 2007
Grant Date -
Jun 8, 2006
app pub date -
Jan 24, 2006
filing date -
Dec 9, 2003
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Abstract
A non-volatile semiconductor memory device includes a non-volatile memory cell and a write circuit that is adapted to write data to the memory cell by supplying a write voltage and a write control voltage to the memory cell to change the write state of the memory cell, changing the supply of the write control voltage to reduce the rate of changing the write state, further changing the supply of the write control voltage to control the reduced rate of changing the write state and terminating the write operation to the memory cell while the rate of changing the write state is reduced.
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