Film deposition method

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United States of America Patent

APP PUB NO 20060121307A1
SERIAL NO

11250532

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Abstract

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In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325
KONDOH EIICHI472-51 NAKASHIMOJO SHIKISHIMA-MACHI NAKAKOMA-GUN YAMANASHI 400-0124

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Komiya, Takayuki Nirasaki-shi, JP 24 249
Kondoh, Eiichi Kai-Shi, JP 23 274
Matsumoto, Kenji Nirasaki-shi, JP 328 4894
Matsuzawa, Koumei Uodu-shi, JP 7 133
Sato, Hiroshi Nirasaki-shi, JP 974 10580

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