Diode with low junction capacitance
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United States of America Patent
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Issued Date -
Jun 15, 2006
app pub date -
Dec 14, 2004
filing date -
Dec 14, 2004
priority date (Note) -
Abandoned
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Abstract
A diode is comprised of a doped region formed with a first dopant of a first conductivity type. In addition, the diode further comprises a substrate doped with a second dopant of a second conductivity type opposite of the first conductivity type. The lightly doped substrate, instead of a well, abuts the doped region for minimizing a junction capacitance of the diode. Such a diode is especially advantageous for ESD (electro-static discharge) protection of high speed integrated circuits.
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