Method of fabricating polycrystalline silicon
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United States of America Patent
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Feb 5, 2008
Grant Date -
Jun 15, 2006
app pub date -
Feb 14, 2006
filing date -
May 20, 2003
priority date (Note) -
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Abstract
A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.
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