Process for fabricating a semiconductor device having an RTCVD layer
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United States of America Patent
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Dec 14, 2004
filing date -
Dec 14, 2004
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Abstract
A process of fabricating a semiconductor device includes forming a device region including a non-volatile memory element and forming a utility layer overlying the device region, where the utility layer is a dielectric material formed by RTCVD. The utility layer preferably has a hydrogen content below that necessary to reduce the data retention of the non-volatile memory element in the device region. The utility layer can function as one or more of an etch-stop layer, a diffusion barrier layer, or an insulating layer.
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