Resistance variable devices with controllable channels
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United States of America Patent
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Issued Date -
Jun 22, 2006
app pub date -
Dec 22, 2004
filing date -
Dec 22, 2004
priority date (Note) -
Abandoned
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Abstract
A memory element having a first electrode is provided, wherein the first electrode comprises at least one conductive nanostructure. The memory element further includes a second electrode and a resistance variable material layer between the first and second electrodes. The first electrode electrically is coupled to the resistance variable material. Methods for forming the memory element are also provided.
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