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Abstract

Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or --O--R.sub.1 or O--SiR.sub.1,R.sub.2,R.sub.3 wherein R.sub.1,R.sub.2, and R.sub.3 are selected from the group consisting C.sub.1 to C.sub.6 straight, cyclic, or branched alkyl, aryl, or alkoxy group, a hydroxyl group, or a siloxane group, and R.sup.6 may be a C.sub.1 to C.sub.36 straight, cyclic, or branched alkyl (e.g., C.sub.18, cyanopropyl), aryl, or alkoxy group, where the groups of R.sup.6 are unsubstituted or substituted with one or more moieties such as halogen, cyano, amino, diol, nitro, ether, carbonyl, epoxide, sulfonyl, cation exchanger, anion exchanger, carbamate, amide, urea, peptide, protein, carbohydrate, and nucleic acid functionalities. The letter 'n' represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.

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First Claim