Metal junction diode and process
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United States of America Patent
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Issued Date -
Jul 20, 2006
app pub date -
Jan 20, 2005
filing date -
Jan 20, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A junction diode includes a substrate having first and second cathode regions separated by an anode region. Metal silicide layers contact the first and second cathode regions and the anode regions. The anode region has a doping concentration sufficient to create a depletion region in the anode region adjacent to the metal silicide layer contacting the anode region. A fabrication process includes forming the anode region to have a doping concentration that increases in a direction into the anode region away from the substrate surface.
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