Multi-layered dielectric film of microelectronic device and method of manufacturing the same
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United States of America Patent
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Mar 24, 2009
Grant Date -
Jul 20, 2006
app pub date -
Jan 19, 2006
filing date -
Jan 19, 2005
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Abstract
Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
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