Method in the fabrication of a memory device
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United States of America Patent
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Issued Date -
Jul 20, 2006
app pub date -
Dec 29, 2005
filing date -
Dec 30, 2004
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In a method for fabricating a memory device based on an electrically polarizable memory material in the form of an electret or ferroelectric material, the memory device comprises one or more layers with circuit structures provided exclusively or partially in a printing process. At least one protective interlayer is provided between at least two layers in the memory device, said protective interlayer exhibiting low solubility as well as low permeability for any solvents employed in the deposition of the other layers in the device. Use in fabricating a memory device, particularly a passive matrix-addressable memory device with an electret or ferroelectric memory material.
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