Back-contacted solar cells with integral conductive vias and method of making
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United States of America Patent
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Issued Date -
Jul 27, 2006
app pub date -
Dec 27, 2005
filing date -
Jun 26, 2003
priority date (Note) -
Abandoned
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Abstract
Methods of manufacturing back-contacted p-type semiconductor substrate solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side, and back-contacted solar cells with integral n-type conductive vias, such as made by a gradient-driven solute transport process.
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