Thin film transistor with microlens structures
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United States of America Patent
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Apr 17, 2007
Grant Date -
Jul 27, 2006
app pub date -
Jul 26, 2005
filing date -
Jan 25, 2005
priority date (Note) -
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Abstract
A thin film transistor with a microlens. A metal gate is formed on a substrate. A gate dielectric covers the metal gate. A semiconductor layer is formed on the gate dielectric. Source/drain metal layers respectively overlap ends of the top surface of the semiconductor layer such that the semiconductor layer between the source/drain metal layers is exposed. The microlens is formed on the exposed top surface of the semiconductor layer.
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