Method for forming inorganic thin film pattern on polyimide resin
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United States of America Patent
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Issued Date -
Jul 27, 2006
app pub date -
Dec 23, 2005
filing date -
Dec 27, 2004
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention provides 1. A method for forming an inorganic thin film pattern on a polyimide resin, which has: (1) a step of forming an alkali-resistant protective film having a thickness of 0.01 to 10 .mu.m on a surface of a polyimide resin; (2) a step of removing the alkali-resistant protective film and a superficial portion of the polyimide resin at the site where an inorganic thin film pattern is formed to form a concave part; (3) a step of contacting an alkaline aqueous solution to the polyimide resin in the concave part to cleave an imide ring of the polyimide resin so as to produce a carboxyl group whereby a polyimide resin having the carboxyl group is formed; (4) a step of contacting a solution containing a metal ion to the polyimide resin having the carboxyl group so as to produce a metal salt of the carboxyl group; and (5) a step of separating the metal salt as a metal, a metal oxide or a semiconductor on the surface of the polyimide resin so as to form the inorganic thin film pattern.
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