Method for etching a molybdenum layer suitable for photomask fabrication

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United States of America Patent

PATENT NO 8293430
APP PUB NO 20060166108A1
SERIAL NO

11044358

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Abstract

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Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chandrachood, Madhavi Sunnyvale, US 19 731
Kumar, Ajay Cupertino, US 489 10751
Yau, Wai-Fan Los Altos, US 74 6007

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