Nonvolatile memory device made of resistance material and method of fabricating the same
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United States of America Patent
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Oct 26, 2010
Grant Date -
Aug 3, 2006
app pub date -
Dec 7, 2005
filing date -
Jan 31, 2005
priority date (Note) -
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Abstract
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.
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