Method of fabricating semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7323386
APP PUB NO 20060170036A1
SERIAL NO

11375975

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region may be located beneath the trench and may be electrically connected to the source region. When the MOSFET is reverse-biased, depletion regions extend from the dielectric sidewall spacers into the 'drift' region, shielding the gate oxide from high electric fields and increasing the avalanche breakdown voltage of the device. This permits the drift region to be more heavily doped and reduces the on-resistance of the device. It also allows the use of a thin, 20 .ANG. gate oxide for a power MOSFET that is to be switched with a 1V signal applied to its gate while being able to block over 30V applied across its drain and source electrodes, for example.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATEDSUNNYVALE, CA542

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yilmaz, Hamza Saratoga, CA 224 3148

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (1)
* 5244823 Process for fabricating a semiconductor device 33 1992
 
SGS-THOMSON MICROELECTRONICS S.R.L. (1)
4957881 Formation of self-aligned contacts 21 1989
 
Power Integrations, Inc. (1)
7038260 Dual gate structure for a FET and method for fabricating same 15 2003
 
PURDUE RESEARCH FOUNDATION (1)
5349224 Integrable MOS and IGBT devices having trench gate structure 39 1993
 
Siliconix Incorporated (1)
5168331 Power metal-oxide-semiconductor field effect transistor 141 1991
 
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED (2)
2005/0167,695 SEMICONDUCTOR DEVICE CONTAINING DIELECTRICALLY ISOLATED PN JUNCTION FOR ENHANCED BREAKDOWN CHARACTERISTICS 19 2004
2005/0167,744 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics 16 2004
 
POWER MOSFET TECHNOLOGIES, L.L.P. (1)
5216275 Semiconductor power devices with alternating conductivity type high-voltage breakdown regions 453 1991
 
STMICROELECTRONICS SA (1)
* 6590240 Method of manufacturing unipolar components 21 2000
 
Kyushu Electric Power Co., Inc. (1)
* 6342709 Insulated gate semiconductor device 36 1998
 
FAIRCHILD SEMICONDUCTOR CORPORATION (1)
* 6635534 Method of manufacturing a trench MOSFET using selective growth epitaxy 37 2001
 
STMICROELECTRONICS, INC. (1)
5960277 Method of making a merged device with aligned trench FET and buried emitter patterns 9 1997
 
Advanced Analogic Technologies, Inc. (1)
6750507 Super-self-aligned trench-gated DMOS with reduced on-resistance 22 2002
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MaxPower Semiconductor, Inc. (2)
* 9024379 Trench transistors and methods with low-voltage-drop shunt to body diode 0 2013
* 2014/0042,535 TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE 6 2013
 
THE BOEING COMPANY (2)
* 7589377 Gate structure with low resistance for high power semiconductor devices 1 2006
* 2008/0085,591 Novel Gate Structure with Low Resistance for High Power Semiconductor Devices 4 2006
 
ICEMOS TECHNOLOGY LTD. (5)
8129252 Semiconductor devices with sealed, unlined trenches and methods of forming same 1 2009
8114751 Multi-angle rotation for ion implantation of trenches in superjunction devices 1 2010
8736019 Semiconductor devices with sealed, unlined trenches and methods of forming same 1 2011
8716829 Semiconductor devices with sealed, unlined trenches and methods of forming same 1 2011
* 2011/0193,176 Semiconductor Devices with Sealed, Unlined Trenches and Methods of Forming Same 2 2011
 
SHORE, MICHAEL W. (1)
9543380 Multi-directional trenching of a die in manufacturing superjunction devices 0 2011
 
DONGBU HITEK CO., LTD. (2)
* 7939410 Semiconductor device and manufacturing method thereof 0 2008
* 2009/0166,733 Semiconductor Device and Manufacturing Method Thereof 1 2008
 
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED (5)
* 7867852 Super-self-aligned trench-dmos structure and method 13 2008
* 2010/0032,751 SUPER-SELF-ALIGNED TRENCH-DMOS STRUCTURE AND METHOD 5 2008
* 8330200 Super-self-aligned trench-DMOS structure and method 2 2010
* 2011/0068,395 SUPER-SELF-ALIGNED TRENCH-DMOS STRUCTURE AND METHOD 9 2010
* 8785280 Super-self-aligned Trench-DMOS structure and method 1 2012
 
RENESAS ELECTRONICS CORPORATION (2)
9117903 Semiconductor device 0 2014
9385230 Semiconductor device 1 2015
 
FAIRCHILD SEMICONDUCTOR CORPORATION (6)
8278702 High density trench field effect transistor 2 2008
* 2010/0065,904 High density trench field effect transistor 16 2008
* 8129778 Semiconductor devices and methods for making the same 1 2009
* 2011/0127,601 Semiconductor Devices and Methods for Making the Same 0 2009
* 8592277 Method of forming low resistance gate for power MOSFET applications 1 2010
* 2011/0014,763 Method of Forming Low Resistance Gate for Power MOSFET Applications 2 2010
 
NEXPERIA B.V. (3)
* 9006822 Trench-gate RESURF semiconductor device and manufacturing method 1 2012
* 2013/0146,967 Trench-Gate Resurf Semiconductor Device and Manufacturing Method 0 2012
9735254 Trench-gate RESURF semiconductor device and manufacturing method 0 2015
* Cited By Examiner

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