Multilayer stack with compensated resonant circuit
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United States of America Patent
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Dec 30, 2008
Grant Date -
Aug 3, 2006
app pub date -
Mar 17, 2004
filing date -
Mar 21, 2003
priority date (Note) -
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Abstract
A metallization structure in a multilayer stack, which is arranged at a distance from a ground electrode, is characterized in that the metallization structure has a capacitor electrode and a line that acts as a coil, where the capacitor electrode and the line are arranged in a common plane which lies parallel with the ground electrode at a distance h1, and in that formula (I) where w is the width of the line.
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