Method of forming a ruthenium thin film using a plasma enhanced atomic layer deposition apparatus and the method thereof
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United States of America Patent
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Issued Date -
Aug 10, 2006
app pub date -
Feb 10, 2005
filing date -
Feb 10, 2005
priority date (Note) -
Abandoned
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Abstract
A method of depositing a ruthenium(Ru) thin film by using readily available ruthenium precursors such as Ru(CP).sub.2 and Ru(EtCP).sub.2, ammonia gas(NH.sub.3) as a reactant gas or a purge gas or both, and a plasma enhanced atomic layer deposition(PEALD) apparatus and the method thereof, according to the present invention, is disclosed. Also a gas mixture of nitrogen gas(N.sub.2) and hydrogen(H.sub.2) is used as a reactant gas or a purge gas or both in addition to ammonia gas in depositing a ruthenium thin film according to the present invention. A ruthenium(Ru) thin film of high density, very pure, very smooth on the film surface and uniform is deposited even at the temperature of the reaction chamber below 400.degree. C. using ammonia gas and a gas mixture of nitrogen gas and hydrogen gas, respectively, as a reactant gas under plasma.
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