Field effect device having a channel of nanofabric and methods of making same
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United States of America Patent
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Jan 29, 2013
Grant Date -
Aug 17, 2006
app pub date -
Jan 13, 2006
filing date -
Jan 14, 2005
priority date (Note) -
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Abstract
Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.
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