High speed, laser-based marking method and system for producing machine readable marks on workpieces and semiconductor devices with reduced subsurface damage produced thereby
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United States of America Patent
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app pub date -
Apr 18, 2006
filing date -
May 17, 2002
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Abstract
An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.
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