Machine specific and machine group correction of masks based on machine subsystem performance parameters
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United States of America Patent
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Issued Date -
Aug 24, 2006
app pub date -
Jan 19, 2006
filing date -
Jan 19, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Determining corrections for a mask used in photolithography includes assembling characteristics of a mask design and an as-drawn specification into a virtual reticle. Assembling characteristics of machine subsystem parameters into a virtual wafer. Emulating machine performance on the virtual reticle and virtual wafer and accumulating the results in an updated virtual wafer. Comparing metrics of the updated virtual wafer to the as-drawn specification and if the comparison meets or exceeds a desired threshold, then incorporating mask clips of the virtual reticle into a final mask design, if the comparison does not meet the desired threshold, then calculating mask corrections, updating the virtual reticle, and repeating emulating and comparing.
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