Silicon dioxide film and process for preparation of the same

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United States of America Patent

APP PUB NO 20060194453A1
SERIAL NO

10550859

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Abstract

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A transparent amorphous silicon dioxide film containing many fine voids, characterized in that the refractive index (for light at .lamda.=500 nm) is in the range of 1.01 to 1.40 and that 80 vol. % or more of the fine voids have a diameter of 5 nm or less, has a low refractive index and excellent physical strength such as high scratch resistance, so that it is advantageously employable as an optical film of an optical device for various uses.

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Patent Owner(s)

Patent OwnerAddress
ORGANIZATION OF SHINSHU UNIVERSITY1-1 ASAHI 3-CHOME MATSUMOTO-SHI NAGANO 390-8621
HIOKI DENKI KABUSHIKI KAISYA81 AZA SAKURAMACHI O-AZA KOIZUMI UEDA-SHI NAGANO 386-1192

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harano, Masayuki Nagano, JP 2 7
Murakami, Yasushi Nagano, JP 60 1479
Takasu, Yoshio Nagano, JP 52 686
Taniguchi, Yoshio Nagano, JP 53 676

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