Bipolar junction transistor with high beta
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United States of America Patent
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Issued Date -
Sep 14, 2006
app pub date -
Mar 11, 2005
filing date -
Mar 11, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In one embodiment of the invention, a bipolar junction transistor (BJT) includes an emitter comprised of a first doped region doped with a first dopant of a first conductivity type. In addition, a salicide block is disposed over a periphery portion of the first doped region, and a salicide is formed on an exposed portion of the first doped region inside the periphery portion. Such a salicide block prevents formation of salicide down to a base region in turn preventing leakage current through the base for increased .beta. of the BJT.
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